EUV Resist Testing Status and Post Lithography LWR Reduction

EUV Lithography—The Successor to Optical Lithography?

This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the...

Report on EUV resist and process limitations

EUV lithography (λ=13.4nm) has been identified as one of the technologies likely to succeed to 193nm lithography for the definition of ever-smaller transistor architectures. Whether EUV in the end will outrank competing technologies for the 32nm and 22nm nodes (Hyper NA immersion, maskless, nanoimprint) and whether EUV will make it to mass production of integrated circuits will depend on both E...

Approach to EUV Lithography Simulation

Nanometer-Scale Patterning on PMMA Resist by Force Microscopy Lithography

Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...

Recent Progress of EUV Resist Technology in EIDEC

EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV ...